PTF10153

PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Guaranteed Performance at 1805, 1843, 1880 MHz, 28 V - Output Power = 60 Watts Min - Power Gain = 11.5 dB Min Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability 60 50 40 30 Typical Output Power & Efficiency vs. Input Power 90 Output Power (Watts) 60 50 40 30 20 10 0 0 2 4 6 8 10 12 Efficiency (%) 80 70 VDD = 28 V IDQ = 650mA f = 1880 MHz A-12 20 10 0 1015 3456 3 99 53 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805, 1843, 1880 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 650 mA, f = 1880 MHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805, 1843, 1880 MHz) Return Loss (VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805, 1843, 1880 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805 —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gps Min 11.5 Typ — Max — Units dB P-1dB hD 60 40 — — — — Watts % ...