PTF10119

PTF 10119 12 Watts, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output. Nitride surface passivation and gold metallization ensure excellent device reliability. INTERNALLY MATCHED Performance at 2.17 GHz, 28 Volts - Output Power = 12 Watts Min - Power Gain = 11 dB Typ - Efficiency = 43% Typ @ P-1dB Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% lot traceability Typical Output Power vs. Input Power 20 Output Power (Watts) 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1 1.2 A-12 1011 9 3456 0053 VDD = 28 V IDQ = 160 mA f = 2170 MHz Input Power (Watts) Package 20222 Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) Symbol VDSS VGS TJ PD TSTG RqJC Value 65 ±20 200 55 0.31 –40 to +150 3.2 Unit Vdc Vdc °C Watts W/°C °C °C/W e 1 PTF 10119 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.0 — Typ — — — 0.8 Max — 1.0 5.0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VD...