PTF 10111 6 Watts, 1.5 GHz GOLDMOS™ Field Effect Transistor
Description
The PTF 10111 is a 6 watt LDMOS FET intended for...
PTF 10111 6 Watts, 1.5 GHz GOLDMOS™ Field Effect Transistor
Description
The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. Performance at 1.5 GHz, 28 Volts - Output Power = 6 Watts - Efficiency = 50% Typ - Power Gain = 16 dB Typ Full Gold Metallization Silicon Nitride Passivated 100% Lot Traceability
Typical Output Power vs. Input Power
8
Output Power (Watts)
7 6 5 4 3 2 1 0 0.0 0.1 0.2 0.3 0.4 0.5
A-12 3456 9820
1011 1
VDD = 28V IDQ = 75 mA f = 1.5 GHz
Input Power (Watts)
Package 20222
Maximum Ratings
Parameter
Drain-Source
Voltage Gate-Source
Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 ±20 200 36 0.208 –40 to +150 4.8
Unit
Vdc Vdc °C Watts W/°C °C °C/W
e
1
PTF 10111
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown
Voltage Drain-Source Leakage Current Gate Threshold
Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 40 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.5 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 — 3.0 —
Typ
68 — — 0.2
Max
— 1 5.0 —
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Common Sourc...
