PTF10065

PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 30 Watts Min - Power Gain = 11.0 dB Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Output Power and Efficiency vs. Input Power 40 Output Power 80 70 60 Efficiency 20 Output Power (Watts) 30 Efficiency 50 40 e 065 123 456 992 1A 10 VDD = 28 V 10 30 20 10 0 IDQ = 380 mA f = 1.99 GHz 0 1 2 3 0 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.93, 1.99 GHz) ACPR (40 Walsh Codes) (VDD = 28 V, POUT = 3 W(CDMA), IDQ = 380 mA, f = 1.99 GHz) (VDD = 28 V, POUT = 3 W(CDMA), IDQ = 380 mA, f = 1.99 GHz) Gain Flatness (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.930–1.990 GHz) Drain Efficiency (VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.99 GHz) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gps ±885 KHz ACPR ±1.98 MHz ACPR GDf hD Min — - 50 - 62 — 9 Typ 11.0 — — — — Max — — — 0.7 — Units dB dBc dBc dB % (table continues next page) e 1 PTF 10065 RF Specifications (cont.) (100% Tested) Characteristic P...