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PTF10021 Datasheet

Part Number PTF10021
Manufacturers Ericsson
Logo Ericsson
Description 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
Datasheet PTF10021 DatasheetPTF10021 Datasheet (PDF)

PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is rated at 30 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 1.5 GHz, 28 Volts - Output Power = 30 Wat.

  PTF10021   PTF10021






Part Number PTF10020
Manufacturers Ericsson
Logo Ericsson
Description 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Datasheet PTF10021 DatasheetPTF10020 Datasheet (PDF)

PTF 10020 125 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivate.

  PTF10021   PTF10021







30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor

PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is rated at 30 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 1.5 GHz, 28 Volts - Output Power = 30 Watts Min - Power Gain = 13 dB Typ - Efficiency = 48% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 40 Output Power (Watts) 30 20 100 21 A-1 234 569 813 VDD = 28 V 10 IDQ = 360 mA f = 1.5 GHz 0 1 2 3 4 5 0 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 10 W, IDQ = 360 mA, f = 1.5 GHz) Power Output at 1 dB Compressed (VDD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.5 GHz) Drain Efficiency (VDD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.5 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W(PEP), IDQ = 360 mA, f = 1.5 GHz— all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gps P-1dB h Y Min 11.0 30 45 — Typ 13.0 — 48 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10021 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs .


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