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PTF10019 Datasheet

Part Number PTF10019
Manufacturers Ericsson
Logo Ericsson
Description 70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Datasheet PTF10019 DatasheetPTF10019 Datasheet (PDF)

PTF 10019 70 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 70 Watts - Power Gain = 14.5 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitr.

  PTF10019   PTF10019






Part Number PTF10015
Manufacturers Ericsson
Logo Ericsson
Description 50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor
Datasheet PTF10019 DatasheetPTF10015 Datasheet (PDF)

PTF 10015 50 Watts, 300–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. Features • Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.0 dB Typ, 12.0 dB Min - Efficiency = 55% Typ Full Gold Met.

  PTF10019   PTF10019







70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor

PTF 10019 70 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 70 Watts - Power Gain = 14.5 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 80 74 Output Power 60 Efficiency 40 66 Output Power (Watts) 50 42 Efficiency (%) 58 A-1 100 2 3 4 19 568 VDD = 28 V 20 34 26 18 10 4.0 955 IDQ = 600 mA f = 960 MHz 0.0 1.0 2.0 3.0 0 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 600 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated. Symbol Gpe P-1dB h Y Min 13.0 70 45 — Typ 14.5 75 50 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10019 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold.


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