LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
Description
PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
Broadband internal matching Typical EDGE performance - Average outp...
