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PTF080451

Infineon Technologies AG
Part Number PTF080451
Manufacturer Infineon Technologies AG
Description LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
Published Apr 16, 2005
Detailed Description PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matc...
Datasheet PDF File PTF080451 PDF File

PTF080451
PTF080451

Overview
PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.
Full gold metallization ensures excellent device lifetime and reliability.
Features • • Broadband internal matching Typical EDGE performance - Average output power = 22.
5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power EDGE Modulation Spectrum Performa...


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