DISCRETE SEMICONDUCTORS
DATA SHEET
PTB23006U Microwave power transistor
Preliminary specification Supersedes data of December 1994 1997 Feb 19
Philips Semiconductors
Preliminary specification
Microwave power transistor
FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and gold diffusion during life • Multicell geometry improves power sharing and .
Microwave power transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
PTB23006U Microwave power transistor
Preliminary specification Supersedes data of December 1994 1997 Feb 19
Philips Semiconductors
Preliminary specification
Microwave power transistor
FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and gold diffusion during life • Multicell geometry improves power sharing and reduces thermal resistance • Internal input prematching network. APPLICATIONS Intended for use in common-base, class C power amplifiers at frequencies up to 2.3 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.
3 2 Top view
MAM131
PTB23006U
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) 2 VCC (V) 28 PL (W) >5 Gp (dB) >9 ηC (%) >40 Zi; ZL ( Ω) see Figs 5 and 6
PINNING - SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
handbook, 4 columns
1 c
b
e
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the .