PTB23002U

DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Very high power gain Internal input prematching network Diffused emitter ballasting resistors improve ruggedness Interdigitated emitter-base structure Gold metallization with barrier layer to prevent electromigration and gold diffusion during life Multicell geometry improves power sharing and reduces thermal resistance. APPLICATIONS Common-base, class C power amplifiers at frequencies up to 2.3 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange. 3 2 Top view MAM131 PTB23002U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) 2.3 VCC (V) 28 PL (W) >2 Gp (dB) >9 ηC (%) >45 Zi; ZL ( Ω) see Figs 5 and 6 PINNING - SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION handbook, 4 columns 1 c b e Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety p...