PTB20245

e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in Wide CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 35 Watts, 2.1–2.2 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 60 Output Power (Watts) 50 40 30 20 10 0 0 2 4 6 8 10 12 202 45 LOT COD E VCC = 26 V ICQ = 100 mA f = 2000 MHz Input Power (Watts) Package 20223 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25° C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70° C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 55 55 3.5 7.7 200 1.2 –40 to +150 0.85 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20245 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 20 mA IB = 0 A, IC = 20 mA, RBE = 22 Ω IC = 0 A, IE = 5 mA VCE = 10 V, IC = 1.5 A Symbol V(BR)CES V(BR...