PTB20239

PTB 20239 12 Watts, 1465–1513 MHz Cellular Radio RF Power Transistor Description The PTB 20239 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 12 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • • 12 Watts, 26 Vdc Class AB Characteristics Surface Mountable Available in Tape and Reel Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 20 Output Power (Watts) 16 12 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCC = 26 V ICQ = 25 mA f = 1513 MHz 20 23 9 LO TC OD E Input Power (Watts) Package 20232 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 50 50 4 2.0 33 0.189 –40 to +150 5.3 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20239 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) Conditions IB = 0 A, IC = 5 mA, RBE = 22 Ω VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4...