PTB20206

e PTB 20206 1.0 Watt, 470–860 MHz RF Power Transistor Description The 20206 is an NPN common emitter RF power transistor intended for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • Class A Characteristics 1.0 Watt, 470–860 MHz -44 dBc Max Two-tone IMD at 1 W(PEP) Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 3.0 Output Power (Watts) 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 0.2 0.3 2020 6 LOT COD E VCE = 20 V ICQ = 360 mA f = 860 MHz Input Power (Watts) Package 20206 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 1.7 13.5 0.077 –40 to +150 13.0 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20206 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain Output Capacitance (100% Tested) e Conditions IC = 5 mA, IB = 0 A VBE = 0 V, IC = 5 mA IB = 0 A, IC = 5 mA, RBE = 22 Ω IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Vcb = 20 V...