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PTB 20204 1.0 Watt, 380–500 MHz RF Power Transistor
Description
The 20204 is a class A, NPN, common emitter RF power t...
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PTB 20204 1.0 Watt, 380–500 MHz RF Power Transistor
Description
The 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.
1.0 Watt, 380–500 MHz Class A Characteristics -40 dB Max Two-Tone IMD at 1.0 W(PEP) Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
2.0
Output Power (Watts)
1.6 1.2 0.8 0.4 0.0 0.00
202 04
LO TC OD E
VCE = 24 V ICQ = 340 mA f = 500 MHz
0.03
0.06
0.09
0.12
0.15
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
60 60 4.0 0.5 11 0.0625 -40 to +150 16
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20204
Electrical Characteristics
Characteristic
Breakdown
Voltage C to E Breakdown
Voltage C to E Breakdown
Voltage E to B DC Current Gain Output Capacitance (100% Tested)
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Conditions
IB = 0 A, IC = 5 mA VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA VCB = 24 V, IE = 0 A, f = 1 MHz
Symbol
V(BR)CEO V(B...