PTB20193

e PTB 20193 60 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor Description The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • 60 Watts, 1.8–1.9 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 70 Output Power (Watts) 60 50 40 30 20 10 1 3 5 7 9 11 13 201 93 LOT COD E VCC = 26 V ICQ = 150 mA f = 1.9 GHz Input Power (Watts) Package 20223 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25° C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70° C) TSTG RθJC Symbol VCER VCES VEBO IC PD Value 55 55 4.0 8 233 1.33 –40 to +150 0.75 Unit Vdc Vdc Vdc Adc W W/°C °C °C/W 1 9/28/98 PTB 20193 Electrical Characteristics Characteristics Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 60 mA, RBE = 27 Ω VBE = 0 V, IC = 60 mA IC = 0 V, IE = 25 mA VCE = 5 V, IC = 300 mA Symbol V(BR)CER V(BR)CES V(BR)EBO Hfe Min 55 55 4 20 Typ — — 5 50 Max — — — 120 ...