PTB20191

e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts (CW) minimum output power, or 15 watts (PEP) output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • Class AB Characteristics 26 Volt, 1.9 GHz Characterization - Output Power = 12 W(CW), 15 W(PEP) Internal Input Matching Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 25 Output Power (Watts) 20 15 10 201 91 LOT COD E VCC = 26 V 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ICQ = 100 mA f = 1.9 GHz Input Power (Watts) Package 20226 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage (emitter open) Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCEO VCBO VEBO IC PD Value 20 50 4.0 2.8 60 0.34 –40 to +150 2.90 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20191 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to B Breakdown Voltage E to B DC Current Gain Output Capacitance (100% Tested) e Conditions IB = 0 A, IC = 5 mA, RBE = 27 Ω IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 200 mA VCB ...