PTB20176

e PTB 20176 5 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 26 Volt, 1.85 GHz Characteristics Class A/AB Internally Matched Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 10 Output Power (Watts) 8 6 4 201 76 LOT COD E VCC = 26 V 2 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ICQ = 30 mA f = 1850 MHz Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Thermal Resistance (Tflange = 70°C) Symbol VCEO VCES VEBO IC PD Tstg RθJC Value 20 45 4.0 1 21 0.12 150 8.5 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20176 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to B Breakdown Voltage E to B DC Current Gain Output Capacitance (100% Tested) e Conditions IB = 0 A, IC = 5 mA, RBE = 22 Ω IB = 0 A, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 200 mA VCB = 26 V, IE = 0 A, f = 1 MHz Symbol V(BR)CER V(BR)C...