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PTB20162 Datasheet

Part Number PTB20162
Manufacturers Ericsson
Logo Ericsson
Description 40 Watts/ 470-900 MHz RF Power Transistor
Datasheet PTB20162 DatasheetPTB20162 Datasheet (PDF)

e PTB 20162 40 Watts, 470–900 MHz RF Power Transistor Description The 20162 is an NPN common emitter RF power transistor intended for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 40 Watts, 470–900 MHz Class AB Characteristics 50% Min Collector .

  PTB20162   PTB20162






Part Number PTB20167
Manufacturers Ericsson
Logo Ericsson
Description 60 Watts/ 850-960 MHz RF Power Transistor
Datasheet PTB20162 DatasheetPTB20167 Datasheet (PDF)

e PTB 20167 60 Watts, 850–960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • 24 Volt, 905 MHz Common Base Characteristics - Output Power = 6.

  PTB20162   PTB20162







Part Number PTB20166
Manufacturers Ericsson
Logo Ericsson
Description 23 Watts/ 675-925 MHz Common Base RF Power Transistor
Datasheet PTB20162 DatasheetPTB20166 Datasheet (PDF)

e PTB 20166 23 Watts, 675–925 MHz Common Base RF Power Transistor Description The 20166 is an NPN, common base RF power transistor intended for 24–30 Vdc class C operation from 675 to 925 MHz. Rated at 23 watts minimum output power, it may be used for both CW and pulsed applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • Specified at 28 Volt, 925 MHz Class C Characterist.

  PTB20162   PTB20162







40 Watts/ 470-900 MHz RF Power Transistor

e PTB 20162 40 Watts, 470–900 MHz RF Power Transistor Description The 20162 is an NPN common emitter RF power transistor intended for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 40 Watts, 470–900 MHz Class AB Characteristics 50% Min Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power & Efficiency vs. Input Power 60 50 70 60 50 Output Power (Watts) 40 30 20 10 0 0 1 2 3 4 5 6 7 8 201 62 LOT COD E VCC = 25 V ICQ = 200 mA f = 900 MHz 30 20 10 Efficiency 40 Input Power (Watts) Package 20226 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 10.0 80 0.45 –40 to +150 2.2 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20162 Electrical Characteristics (100% Tested) Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain e Conditions IB = 0 A, IC = 50 mA, RBE = 22 Ω VBE = 0 V, IC = 50 mA IC = 0 A, IE = 20 mA VCE = 5 V, IC = 1 A Symbol V(BR)CER .


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