PTB20156

e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • • Specified 22 Volts Class C Characteristics Output Power: 8 Watts Gain: 6.0 dB Min. at 8 Watts Gold Metallization Silicon Nitride Passivated Typical Gain & Return Loss vs. Frequency 10 8 Gain (dB) (as measured in a broadband circuit) VCC = 22 V Pin = 2.0 W 0 Return Loss (dB) -3 -6 -9 Gain (dB) 6 4 2 Return Loss (dB) 0 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2015 6 LOT COD E -12 -15 Frequency (GHz) Package 20209 Maximum Ratings Parameter Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCBO VEBO IC PD Value 50 4.0 2.0 52 0.29 –40 to +150 3.4 Unit Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20156 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CES V(BR)EBO hFE Min 50 3.5 — Typ — 5 — Max — — 100 Units ...