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PTB 20144 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor
Description
The 20144 is a class AB, NPN, common emi...
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PTB 20144 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor
Description
The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
6 Watts, 915–960 MHz Class AB Characteristics 50% Typ Collector Efficiency at 6 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
12 10 8 6 4 2 0 0.00
Output Power (Watts)
VCC = 25 V ICQ = 50 mA f = 960 MHz
20
LO
TC O
14
DE
4
0.25
0.50
0.75
1.00
1.25
Input Power (Watts)
Package 20208
Maximum Ratings
Parameter
Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) Tstg RθJC
Symbol
VCER VCBO VEBO IC PD
Value
55 60 4.0 1.7 22 0.125 –40 to +150 8
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20144
Electrical Characteristics
Characteristic
Breakdown
Voltage C to E Breakdown
Voltage C to E Breakdown
Voltage E to B DC Current Gain (100% Tested)
e
Conditions
IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VC...