PTB20097

e PTB 20097 40 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20097 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 40 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 40 Watts, 915–960 MHz Class AB Characteristics 50% Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 60 50 40 30 20 10 0 0 2 4 6 8 10 Output Power (Watts) 200 97 LO TC OD E VCC = 25 V ICQ = 200 mA f = 960 MHz Input Power (Watts) Package 20200 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 10 175 1.0 –40 to +150 1.0 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20097 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 ...