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PTB 20079 10 Watts, 1.6–1.7 GHz INMARSAT RF Power Transistor
Description
The 20079 is a class A/AB, NPN, silicon bipol...
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PTB 20079 10 Watts, 1.6–1.7 GHz INMARSAT RF Power Transistor
Description
The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.
10 Watts, 1.6–1.7 GHz Class A/AB Characteristics 38% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
16 +24V 14 +26V +22V
Output Power (Watts)
12 10 8 6 4 2 0 0.00
2007 9
LOT COD E
f = 1.65 GHz ICQ = 100 mA
0.50 1.00 1.50 2.00
Input Power (Watts)
Package 20209
Maximum Ratings
Parameter
Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25° C Above 25° C derate by Storage Temperature Range Thermal Resistance (Tflange = 70° C) TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
50 50 4.0 1.4 52 0.29 –40 to +150 3.4
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20079
Electrical Characteristics (100% Tested)
Characteristic
Breakdown
Voltage C to E Breakdown
Voltage E to B DC Current Gain
e
Conditions
IC = 15 mA, RBE = 22 Ω IE = 10 mA IC = 1 A, VCE = 5 V
Symbol
V(BR)CER V(BR)EBO hFE
Min
55 4.0 20
Typ
— — —
Max
— — 100
Units
Vd...