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PTB 20053 60 Watts, 860–900 MHz Cellular Radio RF Power Transistor
Description
The 20053 is a class AB, NPN, common em...
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PTB 20053 60 Watts, 860–900 MHz Cellular Radio RF Power Transistor
Description
The 20053 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
60 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 60 Watts Gold Metallization Silicon Nitride Passivated
Gain vs. Frequency
(as measured in a broadband circuit)
13 12
VCC = 25 V ICQ = 200 mA Pout = 60 W
Gain (dB)
11 10 9 8 7 850
200 53
LOT CO DE
860
870
880
890
900
910
Frequency (MHz)
Package 20200
Maximum Ratings
Parameter
Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC
Symbol
VCER VCBO VEBO IC PD
Value
40 65 4.0 8.0 145 0.83 –40 to +150 1.2
Unit
Vdc Vdc Vdc Adc Watts W/°C °C °C/W
1 9/28/98
PTB 20053
Electrical Characteristics
Characteristic
Breakdown
Voltage C to E Breakdown
Voltage C to E Breakdown
Voltage E to B DC Current Gain (100% Tested)
e
Conditions
IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA
Symbol
V(BR)CEO V(BR)CES V(BR)EBO hFE
Min
2...