PTB20051

e PTB 20051 6 Watts, 1.465–1.513 GHz Cellular Radio RF Power Transistor Description The 20051 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 6 Watts, 1.465–1.513 GHz Class AB Characteristics 35% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 9.0 Output Power (Watts) 7.5 6.0 4.5 3.0 1.5 0.0 0 0.5 1 1.5 2 200 51 LOT COD E VCC = 26 V ICQ = 40 mA f = 1.501 GHz Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 0.7 28 0.16 –40 to +150 6.2 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20051 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 10 mA, RBE = 22 Ω VBE = 0 V, IC = 10 mA IC = 0 A, IE = 5 mA VCE = 10 V, IC = 0.7 A Symbol V(BR)CER V(BR)CES V(BR)EBO hFE ...