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PTB20006 Datasheet

Part Number PTB20006
Manufacturers Ericsson
Logo Ericsson
Description 4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
Datasheet PTB20006 DatasheetPTB20006 Datasheet (PDF)

e PTB 20006 4 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 4 Watts, 860–900 MHz Class AB .

  PTB20006   PTB20006






Part Number PTB20009
Manufacturers Ericsson
Logo Ericsson
Description 2.5 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
Datasheet PTB20006 DatasheetPTB20009 Datasheet (PDF)

e PTB 20009 2.5 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20009 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 2.5 Watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 2.5 Watts, 935–960 MHz Cla.

  PTB20006   PTB20006







Part Number PTB20008
Manufacturers Ericsson
Logo Ericsson
Description 10 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
Datasheet PTB20006 DatasheetPTB20008 Datasheet (PDF)

e PTB 20008 10 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20008 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • 10 Watts, 935–960 MHz Class AB Characteristics 50% Collector .

  PTB20006   PTB20006







Part Number PTB20007
Manufacturers Ericsson
Logo Ericsson
Description 30 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
Datasheet PTB20006 DatasheetPTB20007 Datasheet (PDF)

e PTB 20007 30 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 30 Watts, 935–960 MHz Class .

  PTB20006   PTB20006







Part Number PTB20005
Manufacturers Ericsson
Logo Ericsson
Description 15 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
Datasheet PTB20006 DatasheetPTB20005 Datasheet (PDF)

e PTB 20005 15 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20005 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 15 Watts, 860–900 MHz Class .

  PTB20006   PTB20006







4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

e PTB 20006 4 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 4 Watts, 860–900 MHz Class AB Characteristics 50% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 12 Output Power (Watts) 10 8 6 4 2 0 0.00 200 06 LOT COD E VCC = 25 V ICQ = 50 A f = 900 MHz 0.15 0.30 0.45 0.60 0.75 Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 1.7 35 0.2 –40 to +150 5.0 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20006 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Mi.


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