PT9733

PT9733 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9733 is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: Common Emitter PG = 6.0 dB at 50 W/175 MHz Omnigold™ Metalization System B C E ØC E B D H I J MAXIMUM RATINGS IC VCES VEBO PDISS TJ TSTG θJC 8.0 A 60 V 4.0 V 85 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.1 °C/W DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE Cob PG ηC VSWR IC = 25 mA IC = 50 mA IE = 8.0 mA VCE = 25 V VCE = 10 V VCB = 28 V VCE = 28 V PIN = 10 W TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 35 60 4.0 2.0 UNITS V V V mA --Pf dB % --- IC = 500 mA f = 1.0 MHz POUT =50 W f = 175 MHz 20 150 90 6.0 60 6.0 60 ∞ A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...