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PT9701

Part Number	PT9701
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Published	Apr 16, 2005
Detailed Description	PT9701 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701 is a Common Emitter Device Designed for Class A , A...
Datasheet	PT9701 PDF File

Overview

PT9701 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band.
PACKAGE STYLE .
280 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 1.
25 A 45 V 14 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +200 °C 12 °C/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO hFE Cob PG ηC IC = 20 mA IC = 10 mA IE = 1.
0 mA VCE = 5.
0 V VCB = 28 V VCE = 28 V TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 25 45 3.
5 UNITS V V V --- IC = 200 mA f = 1.
0 MHz Pout = 5.
0 W...

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