PSMN085-150K

PSMN085-150K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availability: PSMN085-150K in SOT96-1 (SO8). 2. Features s Very low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s DC to DC convertor s Computer motherboards s Switch mode power supplies. c c 4. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s) 8 5 d Simplified outline Symbol gate (g) drain (d) 1 Top view 4 MBK187 g s MBB076 SOT96-1 (SO8) 1. 2. SiliconMAX is a trademark of Royal Philips Electronics. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors PSMN085-150K N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tsp = 80 °C Tsp = 80 °C VGS = 10 V; ID = 3.5 A; Tj = 25 °C Typ − − − − 67 Max 150 4.1 3.5 150 85 Unit V A W °C mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) gate-source...