LFPAK33
PSMN075-100MSE
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33
designed specifically for PoE applicati...
LFPAK33
PSMN075-100MSE
N-channel 100 V 71 mΩ standard level
MOSFET in LFPAK33
designed specifically for PoE applications
26 March 2013
Product data sheet
1. General description
New standards and proprietary approaches are enabling the next generation of Powerover-Ethernet (PoE) systems capable of delivering up to 100W to each powered device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom CCTV cameras, for example, are placing increased demands on the power sourcing equipment (PSE) in terms of “soft-start” procedures, resilience to short-circuits, thermal management and power density. Part of NXP’s “NextPower Live”
MOSFET portfolio, the PSMN075-100MSE has been designed specifically to compliment the latest PoE controllers, offering both superior linear mode operation and very low RDS(on) in a costeffective, industry compatible, LFPAK33 package.
2. Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation Low Rdson for low conduction losses Ultra reliable LFPAK33 package – no glue, no wires, 175°C Very low IDSS
3. Applications
IEEE802.3at and proprietary solutions - (type 2) Suitable for PoE applications upto 30W Use PSMN040-100MSE for higher power requirements
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source
voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tj = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °...