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PSMN013-100ES

nexperia

N-channel MOSFET

PSMN013-100ES N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. Rev. 3 — 29 September 2011 Product data sheet 1....


nexperia

PSMN013-100ES

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PSMN013-100ES N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. Rev. 3 — 29 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  Low conduction losses due to low on-state resistance  Suitable for high frequency applications due to fast switching characteristics 1.3 Applications  DC-to-DC converters  Load switching  Motor control  Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS Parameter drain-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Min Typ Max Unit - - 100 V ID drain current Tmb = 25 °C; VGS = 10 V; [1] - - 68 A see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 dissipation - - 170 W Tj junction temperature -55 - 175 °C Stati...




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