PSMN011-60MS

PSMN011-60MS N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources LFPAK33 package is footprint compatible with other 3.3mm types Qualified to 175 °C 3. Applications AC-to-DC converters Synchronous rectification DC-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C; resistance Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 15 A; VDS = 30 V; Tj = 25 °C; Fig. 14; Fig. 15 Min Typ Max Unit - - 60 V - - 61 A - - 91 W -55 - 175 °C - 9.6 11.3 mΩ - 5.8 - nC Nexperia PSMN011-60MS N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain 1234 LFPAK33 (SOT1210) Graphic symbol D G mbb...