PSMN003-25W

Philips Semiconductors Product specification N-channel logic level TrenchMOS™ transistor FEATURES ’Trench’ technology Very low on-state resistance Fast switching Low thermal resistance g PSMN003-25W QUICK REFERENCE DATA SYMBOL d VDSS = 25 V ID = 100 A RDS(ON) ≤ 3.2 mΩ (VGS = 10 V) RDS(ON) ≤ 3.5 mΩ (VGS = 5 V) s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications: d.c. to d.c. converters switched mode power supplies The PSMN003-25W is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT429 (TO247) 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS VGSM ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Continuous gate-source voltage Peak pulsed gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tj ≤ 150 ˚C Tmb = 25 ˚C; VGS = 5 V Tmb = 100 ˚C; VGS = 5 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 25 25 ± 15 ± 20 1001 1001 300 300 175 UNIT V V V V A A A W ˚C 1 Maximum continuous current limited by package. October 1999 1 Rev 1.100 Philips Semiconductors Product specification N-channel logic level TrenchMOS™ transistor AVALANCHE ENERG...