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PNZ331F

Panasonic Semiconductor

PIN Photodiode

PIN Photodiodes PNZ331F PIN Photodiode Unit : mm 1 0. 0± 1. ø5.4±0.1 ø4.6±0.05 ø2.4±0.1 For optical fiber communicatio...


Panasonic Semiconductor

PNZ331F

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Description
PIN Photodiodes PNZ331F PIN Photodiode Unit : mm 1 0. 0± 1. ø5.4±0.1 ø4.6±0.05 ø2.4±0.1 For optical fiber communication systems Features Metal package with shield pin High coupling capability suitable for plastic fiber and glass fiber High-speed response 14.2±0.5 (0.3) (0.5) High quantum efficiency 3.2±0.05 3-ø0.45±0.04 ø2.54±0.25 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 50 – 25 to +100 – 40 to +100 Unit V mW ˚C ˚C 2 3 1 1. 0± 0. 1 45± 3˚ 1: Anode 2: Case 3: Cathode Dimensions of detection area 1.1 0.88 Active region A1 ø0.1 Unit : mm Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Photo current Peak sensitivity wavelength Frequency characteristics Capacitance between pins Photodetection sensitivity Acceptance half angle Photodetection surface shape Symbol ID IL λP fC*2 Ct R θ D VR = 10V VR = 10V, L = 1000 lx*1 VR = 10V VR = 10V, RL = 50Ω VR = 10V VR = 10V, λ = 800nm Measured from the optical axis to the half power point Effective photodetection area 0.45 4 Conditions min typ 0.1 7 900 50 3 0.55 40 0.88 max 10 Unit nA µA nm MHz pF A/W deg. mm Note 1) Spectral sensitivity : Sensitivity at wavelengths exceeding 400 nm as a percentage, is 100% to maximum sensitivity. Note 2) This product is not designed to withstand electromagnetic radiation or heavy-charge particles. Note 3) The glass strength of this product cannot...




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