PIN Photodiodes
PNZ331F
PIN Photodiode
Unit : mm
1 0. 0± 1.
ø5.4±0.1 ø4.6±0.05 ø2.4±0.1
For optical fiber communicatio...
PIN Photodiodes
PNZ331F
PIN Photodiode
Unit : mm
1 0. 0± 1.
ø5.4±0.1 ø4.6±0.05 ø2.4±0.1
For optical fiber communication systems Features
Metal package with shield pin High coupling capability suitable for plastic fiber and glass fiber High-speed response
14.2±0.5
(0.3)
(0.5)
High quantum efficiency
3.2±0.05
3-ø0.45±0.04
ø2.54±0.25
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Reverse
voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 50 – 25 to +100 – 40 to +100 Unit V mW ˚C ˚C
2 3 1
1. 0± 0. 1
45± 3˚
1: Anode 2: Case 3: Cathode
Dimensions of detection area
1.1 0.88 Active region A1 ø0.1
Unit : mm
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Dark current Photo current Peak sensitivity wavelength Frequency characteristics Capacitance between pins Photodetection sensitivity Acceptance half angle Photodetection surface shape Symbol ID IL λP fC*2 Ct R θ D VR = 10V VR = 10V, L = 1000 lx*1 VR = 10V VR = 10V, RL = 50Ω VR = 10V VR = 10V, λ = 800nm Measured from the optical axis to the half power point Effective photodetection area 0.45 4 Conditions min typ 0.1 7 900 50 3 0.55 40 0.88 max 10 Unit nA µA nm MHz pF A/W deg. mm
Note 1) Spectral sensitivity : Sensitivity at wavelengths exceeding 400 nm as a percentage, is 100% to maximum sensitivity. Note 2) This product is not designed to withstand electromagnetic radiation or heavy-charge particles. Note 3) The glass strength of this product cannot...