PIN Photodiodes
PNZ313B
PIN Photodiode
Unit : mm
For optical control systems
8.0±0.5 5.0
7.0±0.5 Anode mark ø1.6 Devi...
PIN Photodiodes
PNZ313B
PIN Photodiode
Unit : mm
For optical control systems
8.0±0.5 5.0
7.0±0.5 Anode mark ø1.6 Device center
Features
Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) Wide detection area, wide acceptance half angle : θ = 65 deg. (typ.) Adoption of visible light cutoff resin
13 min. 2.3±0.3
2-1.2±0.15 2-0.6±0.15 0.41±0.15 2 1 5.08±0.25
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Reverse
voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 100 –30 to +85 – 40 to +100 Unit V mW ˚C ˚C
2.8±0.3
1: Cathode 2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Dark current Photo current Peak sensitivity wavelength Response time Response time Capacitance between pins Acceptance half angle
*1 *2
Symbol ID IL λP tr, tf
*2
Conditions VR = 10V VR = 10V, L = 1000 VR = 10V VR = 10V, RL = 1kΩ VR = 10V, RL = 100kΩ VR = 0V, f = 1MHz Measured from the optical axis to the half power point lx*1
min 15
typ 5 25 960 50 5 70 65
max 50
Unit nA µA nm ns µs pF deg.
tr, tf*2 Ct θ
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit
Sig.IN VR = 10V (Input pulse) Sig.OUT (Output pulse) RL td tr tf 90% 10% td : Delay time tr : Rise time (Time requir...