PNZ107F

Phototransistors PNZ107F, PNZ108F Silicon NPN Phototransistors PNZ107F Unit : mm ø4.6±0.15 Glass window For optical control systems Features Flat window design which is suited to optical systems Wide directional sensitivity for easy use Fast response : tr = 8 µs (typ.) Signal mixing capability using base pin (PNZ108F) TO-18 standard type package 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature * ø5.75 max. Symbol VCEO VCBO * Ratings 20 30 3 5 30 150 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C 4.5±0.2 1: Emitter 2: Collector PNZ108F ø4.6±0.15 Unit : mm Glass window VECO VEBO* IC PC Topr Tstg 12.7 min. 3-ø0.45±0.05 2.54±0.25 PNZ108F only 1. 0 0± .2 5 45± 0± 0. 1 3˚ 1. 3 2 1 1: Emitter 2: Base 3: Collector ø5.75 max. 1 PNZ107F, PNZ108F Phototransistors Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf*2 VCE(sat) VCE = 10V Conditions VCE = 10V, L = 100 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100Ω ICE(L) = 1mA, L = 1000 lx*1 min 0.4 typ ...