PNA4S01M

Photo IC PNA4S01M Series (PNA4S01M/4S02M/4S03M/4S04M) Bipolar Integrated Circuit with Photodetection Function For infrared remote control systems Features Surface-mouting type for reflow soldering Metal shieldless Space saved by miniaturization Ready for automatic mounting 7.6 (3.8) Unit : mm 5.2 (2.6) 1 2 3.47 R1.7 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power supply voltage Power dissipation Operating ambient temperature Storage temperature Symbol VCC PD Topr Tstg Ratings – 0.5 to +7 200 –20 to +60 – 30 to +70 Unit V mW ˚C ˚C 3 4 1: VO 2: VCC 3: GND 4: GND Main Characteristics (Ta = 25˚C VCC = 5V) Parameter Operating supply voltage Current consumption Maximum reception distance Low-level output voltage High-level output voltage Low-level pulse width High-level pulse width PNA4S01M Carrier frequency PNA4S02M PNA4S03M PNA4S04M *1 Symbol VCC ICC Lmax*1 VOL*2 VOH TWL*1 TWH*1 Conditions No signal condition L≤5.0m, 10L=400µA No signal condition L=5.0m, 16Pulse L=5.0m, 16Pulse min 4.7 1.8 5.0 typ 5.0 2.4 0.35 max 5.3 3.0 0.5 VCC 600 600 Unit V mA m V V µs µs 4.8 200 200 5.0 400 400 36.7 38.0 40.0 56.9 f0 kHz Fig.1 burst wave, L=Lmax, 16 pulses Carrier wave : fo *2 Fig.2 continuous wave, L≤Lmax Carrier wave : fo 400µs 400µs Fig.1 Fig.2 1 Photo IC PNA4S01M, PNA4S02M, PNA4S03M, PNA4S04M Block Diagram (20kΩ) amplifier AGC B.P.F demodulator comparator VCC RL VO constant voltage peak hold Panasonic Transmitter Specifications LED Transmission uni...