DISCRETE SEMICONDUCTORS
DATA SHEET
PN4416; PN4416A N-channel field-effect transistor
Product specification File under D...
DISCRETE SEMICONDUCTORS
DATA SHEET
PN4416; PN4416A N-channel field-effect transistor
Product specification File under Discrete Semiconductors, SC07 December 1997
Philips Semiconductors
Product specification
N-channel field-effect transistor
FEATURES Low noise Interchangeability of drain and source connections High gain. DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF
amplifiers, oscillators and mixers. PINNING - SOT54 (TO-92). PIN 1 2 3 gate source drain DESCRIPTION IDSS Ptot VGS(off) QUICK REFERENCE DATA SYMBOL VDS PARAMETER drain-source
voltage PN4416 PN4416A drain current total power dissipation gate-source cut-off
voltage PN4416 PN4416A Yfs common-source transfer admittance
PN4416; PN4416A
CONDITIONS
MIN. MAX. UNIT − − 30 35 15 400 V V mA mW
VDS = 15 V; VGS = 0 5 up to Tamb = 25 °C VDS = 15 V; ID = 1 nA − −2.5 VDS = 15 V; VGS = 0; f = 1 kHz 4.5 −
−6 −6 7.5
V V mS
1 handbook, halfpage 2 3 g
MAM042
d s
Fig.1 Simplified outline and symbol.
December 1997
2
Philips Semiconductors
Product specification
N-channel field-effect transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS PARAMETER drain-source
voltage PN4416 PN4416A VGSO gate-source
voltage PN4416 PN4416A VGDO gate-drain
voltage PN4416 PN4416A IG Ptot Tstg Tj DC forward gate current total power dissipation storage temperature junction temperature up to Tamb = 25 °C (note 1) −...