DatasheetsPDF.com

PN3566

Fairchild Semiconductor

NPN General Purpose Amplifier

PN3566 PN3566 NPN General Purpose Amplifier • This device is for use as a medium amplifier and switch requiring collect...


Fairchild Semiconductor

PN3566

File Download Download PN3566 Datasheet


Description
PN3566 PN3566 NPN General Purpose Amplifier This device is for use as a medium amplifier and switch requiring collector currents up 300mA. Sourced from process 19. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 40 5 600 - 55 ~ 150 Units V V V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition IC = 30mA, IB = 0 IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VEB = 5V, IC = 0 VCE = 10V, IC = 2.0mA VCE = 10V, IC = 10mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA VCB = 10V, IE = 0 80 150 Min. 30 40 5 50 10 Typ. Max. Units V V V nA µA Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current On Characteristics hFE DC Current Gain VCE(sat) VBE(on) Collector-Emitter Saturation Voltage * Base-Emitter On Voltage 600 1.0 0.9 25 V V pF Small Signal Characteristics Cobo Output Capacitance * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJA RθJC Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Jun...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)