DatasheetsPDF.com

PN3563 Datasheet

Part Number PN3563
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN RF Amplifier
Datasheet PN3563 DatasheetPN3563 Datasheet (PDF)

PN3563 Discrete POWER & Signal Technologies PN3563 C BE TO-92 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 30 2.0 50 .

  PN3563   PN3563






Part Number PN3563
Manufacturers Central Semiconductor Corp
Logo Central Semiconductor Corp
Description Small Signal Transistors
Datasheet PN3563 DatasheetPN3563 Datasheet (PDF)

Small Signal Transistors TO-92 Case (Continued) TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO ICBO @ VCB (nA) (V) MIN 40 50 60 80 100 300 500 400 60 80 20 30 30 30 30 -40 50 60 300 500 --30 30 140 100 30 75 40 60 60 30 30 30 40 80 80 80 25 6.0 12 (V) *VCES MIN 40* 50* 50* 80* 100 300 400 350 60 80 20* 30* 30* 30* 30* 40 40* 50* 60* 300 400 25* 25* 25 25 120 100 15 40 15 60 60 12 15 25 30 40 60 40 25 6.0 12 (V) MAX 10 10 10 12 12 6.0 6.0 6.0 4.0 4.0 10 10 10 8.0 8.0 4.0 10 10 10 5.0 6.0 10 10 3.0 3.0 .

  PN3563   PN3563







NPN RF Amplifier

PN3563 Discrete POWER & Signal Technologies PN3563 C BE TO-92 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 30 2.0 50 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN3563 350 2.8 125 357 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation PN3563 NPN RF Amplifier (continued) Electrical Characteristics Symbol Parameter TA= 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS VCEO(sus) V(BR)CBO V(BR)EBO ICBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emi.


2005-05-09 : MM54C221    MM54C240    MM54C244    MM54C42    MM54C74    MM54C85    MM54C86    MM54C89    MM54C90    MM54C901   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)