PN3439

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN3439; PN3440 NPN high-voltage transistors Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES Low current (max. 100 mA) High voltage (max. 350 V). APPLICATIONS Telephony and professional communication equipment. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. 1 handbook, halfpage PN3439; PN3440 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage PN3439 PN3440 VCEO collector-emitter voltage PN3439 PN3440 ICM Ptot hFE hFE fT peak collector current total power dissipation DC current gain PN3439 DC current gain PN3440 transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz IC = 20 mA; VCE = 10 V 40 70 − − MHz Tamb ≤ 25 °C IC = 2 mA; VCE = 10 V 30 − open base − − − − 350 250 200 500 V V mA mW open emitter − − 400 300 V V CONDITIONS MIN. MAX. UNIT 1997 Sep 04 2 Philips Semiconductors Product specification NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PN3439 PN3440 VCEO collector-emitter voltage PN3439 PN3440 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total po...