PN2369

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2369; PN2369A NPN switching transistors Product specification Supersedes data of 1997 May 07 1999 Apr 14 Philips Semiconductors Product specification NPN switching transistors FEATURES Low current (max. 200 mA) Low voltage (max. 15 V). APPLICATIONS High-speed switching applications. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PINNING PIN 1 2 3 collector base emitter PN2369; PN2369A DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −55 − −55 MIN. MAX. 40 15 5 200 300 100 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 14 2 Philips Semiconductors Product specification NPN switching transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain PN2369 CONDITIONS IE = 0; VCB =...