PN200 / MMBT200 / PN200A / MMBT200A
Discrete POWER & Signal Technologies
PN200 PN200A
MMBT200 MMBT200A
C
E C B
TO-9...
PN200 / MMBT200 / PN200A / MMBT200A
Discrete POWER & Signal Technologies
PN200 PN200A
MMBT200 MMBT200A
C
E C B
TO-92
E
SOT-23
Mark: N2 / N2A
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base
Voltage Emitter-Base
Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter
Voltage
Value
45 75 6.0 500 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN200A 625 5.0 83.3 200
Max
*MMBT200A 350 2.8 357
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
© 1997 Fairchild Semiconductor Corporation
PN200 / MMBT200 / PN200A / MMBT200A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditi...