Phototransistors
PN163NC
Silicon NPN Phototransistor
3.5±0.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8
Unit : mm
3.0±0.3 1.95±0.25 1.4±0.2 0.9 0.5
For optical control systems Features
High sensitivity Fast response : tr = 4 µs (typ.) Adoption of visible light cutoff resin Ultraminiature, thin side-view type package
ø1.1 R0.5
12 min. Not soldered 2.15 max.
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