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PN108 Datasheet

Part Number PN108
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description (PN107) Silicon NPN Phototransistors
Datasheet PN108 DatasheetPN108 Datasheet (PDF)

Phototransistors PNZ107, PNZ108 (PN107, PN108) Silicon NPN Phototransistors PNZ107 4.6 0.15 Glass lens Unit : mm For optical control systems Features High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx) Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin (PNZ0108) TO-18 standard type package 0. 15 0 1. 12.7 min. 6.3 0.3 2- 0.45 0.05 2.54 0.25 2 0. 45 0 3 1. 2 1 Absolute Maximum Ratings (Ta = 25˚C.

  PN108   PN108






Part Number PN10HN60-CBI-T1
Manufacturers Chipown
Logo Chipown
Description N-Channel Superjunction MOSFET
Datasheet PN108 DatasheetPN10HN60-CBI-T1 Datasheet (PDF)

PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General Description The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provid.

  PN108   PN108







Part Number PN10HN60-CAI-T1
Manufacturers Chipown
Logo Chipown
Description N-Channel Superjunction MOSFET
Datasheet PN108 DatasheetPN10HN60-CAI-T1 Datasheet (PDF)

PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General Description The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provid.

  PN108   PN108







Part Number PN10HN60
Manufacturers Chipown
Logo Chipown
Description N-Channel Superjunction MOSFET
Datasheet PN108 DatasheetPN10HN60 Datasheet (PDF)

PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General Description The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies. The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET. By combining the experience of the leading SJ MOSFET supplier, utilizing this advanced technology and precise process control, NeoFET provid.

  PN108   PN108







Part Number PN108CL
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Phototransistor
Datasheet PN108 DatasheetPN108CL Datasheet (PDF)

Phototransistors PNZ108CL (PN108CL) Silicon NPN Phototransistor Unit : mm For optical control systems Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin 15 0. 1. 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 3-ø0.45±0.05 2.54±0.25 1. 0± 0. 15 Small size (low in height) package 0± 3˚ 45± Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector.

  PN108   PN108







(PN107) Silicon NPN Phototransistors

Phototransistors PNZ107, PNZ108 (PN107, PN108) Silicon NPN Phototransistors PNZ107 4.6 0.15 Glass lens Unit : mm For optical control systems Features High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx) Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin (PNZ0108) TO-18 standard type package 0. 15 0 1. 12.7 min. 6.3 0.3 2- 0.45 0.05 2.54 0.25 2 0. 45 0 3 1. 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature * 5.75 max. Symbol VCEO VCBO * Ratings 20 30 3 5 30 150 –25 to +85 –30 to +100 Unit V V V mA mW 12.7 min. 6.3 0.3 1: Emitter 2: Collector PNZ108 4.6 0.15 Glass lens Unit : mm VECO VEBO* IC PC Topr Tstg V ˚C ˚C 3- 0.45 0.05 PNZ108 only 1. 0 2.54 0.25 0. 2 15 45 0 0. 3 1. 3 2 1 5.75 max. 1: Emitter 2: Base 3: Collector Note) The part numbers in the parenthesis show conventional part number. 1 Phototransistors PNZ107, PNZ108 Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf *2 Conditions VCE = 10V VCE = 10V, L = 100 VCE = 10V Measured from the optical axis to the half powe.


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