DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D187
PMSTA42; PMSTA43 NPN high-voltage transistors
Product data shee...
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D187
PMSTA42; PMSTA43 NPN high-
voltage transistors
Product data sheet Supersedes data of 1997 Jun 19
1999 May 21
NXP Semiconductors
NPN high-
voltage transistors
Product data sheet
PMSTA42; PMSTA43
FEATURES High current (max. 500 mA) High
voltage (max. 200 V).
APPLICATIONS High-
voltage switching in telephony applications.
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
DESCRIPTION
NPN high-
voltage transistor in a SOT323 plastic package. PNP complements: PMSTA92 and PMSTA93.
handbook, halfpage
3
3
MARKING
TYPE NUMBER PMSTA42 PMSTA43
MARKING CODE(1) ∗1D ∗1E
Note
1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia.
1 Top view
1
2
MAM062
2
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO
VCEO
VEBO IC ICM IBM Ptot Tstg Tj Tamb
PARAMETER
collector-base
voltage PMSTA42 PMSTA43
collector-emitter
voltage PMSTA42 PMSTA43
emitter-base
voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
CONDITIONS open emitter open base open collector
Tamb ≤ 25 °C; note 1
Note 1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
− 300 V − 200 V
− 300 V
− 200 V
−6V
− 100 mA
− 200 mA
− 100 mA
− 200 mW
−65
+150
°C
− 150 °C
−65
+150
°C
1999 May 21
2
NXP Semiconductors
NPN high-volta...