PMST6428

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST6428; PMST6429 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 12 1999 Apr 22 Philips Semiconductors Product specification NPN general purpose transistors FEATURES Low current (max. 100 mA) Low voltage (max. 50 V). APPLICATIONS General purpose switching and amplification in e.g. telephony and professional communication equipment. DESCRIPTION NPN transistor in an SC-70; SOT323 plastic package. MARKING TYPE NUMBER PMST6428 PMST6429 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1K ∗1L Fig.1 1 Top view PMST6428; PMST6429 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 2 2 MAM062 Simplified outline (SC-70; SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST6428 PMST6429 VCEO collector-emitter voltage PMST6428 PMST6429 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 50 45 6 100 200 100 200 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − 60 55 V V MIN. MAX. UNIT 1999 Apr 22 2 Philips Semiconductors Pr...