PMST5550

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST5550; PMST5551 NPN high-voltage transistors Product specification Supersedes data of 1997 May 20 1999 Apr 29 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES Low current (max. 300 mA) High voltage (max. 160 V). APPLICATIONS Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. PNP complement: PMST5401. PINNING PIN 1 2 3 PMST5550; PMST5551 DESCRIPTION base emitter collector handbook, halfpage 3 3 1 MARKING TYPE NUMBER PMST5550 PMST5551 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol. MARKING CODE(1) ∗1F ∗G3 2 1 Top view 2 MAM062 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST5550 PMST5551 VCEO collector-emitter voltage PMST5550 PMST5551 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 140 160 6 300 600 100 200 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − 160 180 V V MIN. MAX. UNIT 1999 Apr 29 2 Philips Semiconductors Produ...