PMST5088

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST5088; PMST5089 NPN general purpose transistors Product specification Supersedes data of 1997 May 22 1999 Apr 22 Philips Semiconductors Product specification NPN general purpose transistors FEATURES Low current (max. 100 mA) Low voltage (max. 30 V). APPLICATIONS Low-noise input stages in audio equipment. DESCRIPTION NPN transistor in a SC-70; SOT323 plastic package. MARKING TYPE NUMBER PMST5088 PMST5089 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST5088 PMST5089 VCEO collector-emitter voltage PMST5088 PMST5089 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base CONDITIONS open emitter MARKING CODE(1) ∗1Q ∗1R Fig.1 1 Top view handbook, halfpage PMST5088; PMST5089 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 2 MAM062 Simplified outline (SC-70; SOT323) and symbol. MIN. − − − − − − − − − −65 − −65 MAX. 35 30 30 25 4.5 100 200 100 200 +150 150 +150 V V V V V UNIT mA mA mA mW °C °C °C 1999 Apr 22 2 Philips Semiconductors Product specification NPN general purpose transistors THERMA...