PMST4401

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST4401 NPN switching transistor Product specification Supersedes data of 1997 May 07 1999 Apr 22 Philips Semiconductors Product specification NPN switching transistor FEATURES High current (max. 600 mA) Low voltage (max. 40 V). APPLICATIONS General purpose switching and linear amplification, especially in portable equipment. DESCRIPTION handbook, halfpage PMST4401 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 NPN switching transistor in a SOT323 plastic package. PNP complement: PMST4403. 1 3 MARKING TYPE NUMBER PMST4401 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol. MARKING CODE(1) ∗2X 2 1 Top view 2 MAM062 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 60 40 6 600 600 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 22 2 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. T...