PMST2369

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST2369 NPN switching transistor Product specification Supersedes data of 1997 May 05 1999 Apr 22 Philips Semiconductors Product specification NPN switching transistor FEATURES Low current (max. 200 mA) Low voltage (max. 15 V). APPLICATIONS High-speed switching applications, primarily in portable and consumer equipment. DESCRIPTION NPN switching transistor in a SOT323 plastic package. handbook, halfpage PMST2369 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING TYPE NUMBER PMST2369 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol. MARKING CODE(1) ∗1J 2 1 Top view 2 MAM062 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 tp ≤ 10 µs CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 40 15 5 200 300 100 200 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 22 2 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on a...